Manufacturer Part Number
KSB772YSTU
Manufacturer
onsemi
Introduction
The KSB772YSTU is a discrete semiconductor transistor, specifically a PNP bipolar junction transistor (BJT).
Product Features and Performance
Operating temperature up to 150°C
Power dissipation of up to 1 W
Collector-emitter breakdown voltage of up to 30 V
Collector current of up to 3 A
Collector cutoff current of up to 1 A
Collector-emitter saturation voltage of 500 mV @ 200 mA, 2 A
DC current gain (hFE) of at least 160 @ 1 A, 2 V
Transition frequency of 80 MHz
Product Advantages
Robust and reliable performance
Suitable for high-power applications
Wide operating temperature range
Through-hole mounting for easy integration
Key Technical Parameters
Transistor Type: PNP
Collector-Emitter Breakdown Voltage (Max): 30 V
Collector Current (Max): 3 A
Collector Cutoff Current (Max): 1 A
Collector-Emitter Saturation Voltage (Max): 500 mV @ 200 mA, 2 A
DC Current Gain (hFE) (Min): 160 @ 1 A, 2 V
Transition Frequency: 80 MHz
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with TO-126-3 package and TO-225AA footprint
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Servo systems
Audio equipment
Product Lifecycle
The KSB772YSTU is an active product and is not nearing discontinuation. Replacements and upgrades may be available from onsemi.
Key Reasons to Choose This Product
Robust and reliable performance for high-power applications
Wide operating temperature range for versatile use
Through-hole mounting for easy integration into various designs
RoHS3 compliance for environmentally-conscious applications
Availability of replacements and upgrades from the manufacturer
