Manufacturer Part Number
KSB1017YTU
Manufacturer
onsemi
Introduction
High-power, high-voltage PNP bipolar junction transistor
Product Features and Performance
Capable of handling up to 25W of power
Breakdown voltage of 80V between collector and emitter
Collector current up to 4A
Collector cutoff current up to 30A
Transition frequency of 9MHz
Product Advantages
Robust and reliable performance
Suitable for high-power, high-voltage applications
Through-hole mounting for secure installation
Key Technical Parameters
Power Rating: 25W
Collector-Emitter Breakdown Voltage: 80V
Collector Current (Max): 4A
Collector Cutoff Current (Max): 30A
Vce Saturation Voltage: 1.7V @ 300mA, 3A
DC Current Gain: 120 min @ 500mA, 5V
Transition Frequency: 9MHz
Quality and Safety Features
RoHS3 compliant
Reliable TO-220F-3 package
Compatibility
Compatible with a wide range of high-power, high-voltage electronic circuits and systems
Application Areas
High-power audio amplifiers
Switch-mode power supplies
Motor control circuits
Industrial and automotive electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Robust and reliable performance for high-power, high-voltage applications
Capable of handling up to 25W of power
Wide operating temperature range up to 150°C
RoHS3 compliant for environmental compliance
Secure through-hole mounting for reliable installation