Manufacturer Part Number
KSA473YTU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
TO-220-3 Package
Operating Temperature: 150°C (TJ)
Power Rating: 10 W
Collector-Emitter Breakdown Voltage: 30 V
Collector Current (Max): 3 A
Collector Cutoff Current (Max): 1 A
Collector-Emitter Saturation Voltage: 800 mV @ 200 mA, 2 A
DC Current Gain (hFE): 120 (Min) @ 500 mA, 2 V
Transition Frequency: 100 MHz
Product Advantages
High power handling capability
Wide operating voltage range
High current capacity
Low saturation voltage
High transition frequency
Key Technical Parameters
Bipolar Junction Transistor Type: PNP
Package: TO-220-3
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuit designs requiring a high-performance PNP transistor
Application Areas
Power amplifiers
Switching circuits
Audio circuits
Household appliances
Industrial control systems
Product Lifecycle
Active product
Replacements and upgrades may be available from the manufacturer
Several Key Reasons to Choose This Product
High power handling and current capacity
Wide operating voltage range
Low saturation voltage for efficient operation
High transition frequency for high-speed applications
RoHS3 compliance for environmental responsibility
Compatibility with various electronic circuit designs
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