KSA1156YS - onsemi

Manufacturer Part Number

KSA1156YS

Manufacturer

onsemi

Introduction

Bipolar junction transistor (BJT) in PNP configuration

Designed for general-purpose switching and amplifier applications

Product Features and Performance

High voltage rating of 400 V

Capable of handling up to 500 mA of collector current

Low collector-emitter saturation voltage of 1 V at 100 mA collector current

DC current gain of at least 100 at 100 mA collector current

Product Advantages

Reliable performance in a wide range of applications

Robust design with high voltage and current handling capabilities

Efficient switching and amplification characteristics

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 400 V

Current Collector (Ic) (Max): 500 mA

Current Collector Cutoff (Max): 100 A (ICBO)

Vce Saturation (Max) @ Ib, Ic: 1 V @ 10 mA, 100 mA

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 5 V

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

TO-126-3 package

Suitable for through-hole mounting

Application Areas

General-purpose switching and amplifier applications

Industrial and consumer electronics

Product Lifecycle

No indication of discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

High voltage and current handling capabilities

Efficient switching and amplification performance

Reliable and safe operation

Wide range of applications in industrial and consumer electronics