HUFA76429D3 - onsemi

Manufacturer Part Number

HUFA76429D3

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET transistor

Product Features and Performance

Optimized for high-power, high-efficiency switching applications

Designed for high-frequency switching

Provides low on-resistance for reduced power dissipation

Product Advantages

Excellent switching characteristics

Low gate charge for fast switching

High power density

Robust design for reliability

Key Technical Parameters

Drain to Source Voltage (Vdss): 60 V

Vgs (Max): ±16 V

Rds On (Max) @ Id, Vgs: 23 mΩ @ 20 A, 10 V

Current Continuous Drain (Id) @ 25°C: 20 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V

Power Dissipation (Max): 110 W (Tc)

Vgs(th) (Max) @ Id: 3 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V

Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Designed for high reliability

Compatibility

Suitable for various high-power, high-frequency switching applications

Application Areas

Switchmode power supplies

Motor drives

Industrial electronics

Telecommunications equipment

Automotive electronics

Product Lifecycle

Current production model, no discontinuation planned

Several Key Reasons to Choose This Product

Excellent switching performance for high-efficiency, high-power applications

Low on-resistance for reduced power dissipation

Fast switching capability for high-frequency operation

Robust design for reliable operation

Compact and efficient package (TO-251-3 Short Leads, IPak, TO-251AA)