Manufacturer Part Number
HUFA76407DK8T
Manufacturer
onsemi
Introduction
The HUFA76407DK8T is a dual N-channel MOSFET from onsemi's UltraFET series designed for high-performance power switching applications.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
90mΩ maximum On-Resistance (Rds(on)) at 3.8A, 10V
330pF maximum Input Capacitance (Ciss) at 25V
2nC maximum Gate Charge (Qg) at 10V
Logic Level Gate (Vgs(th) max 3V at 250μA)
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Optimized for high-efficiency power conversion
Excellent switching performance
Compact 8-SOIC surface mount package
Suitable for a variety of power management applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 90mΩ max at 3.8A, 10V
Input Capacitance (Ciss): 330pF max at 25V
Gate Charge (Qg): 11.2nC max at 10V
Gate Threshold Voltage (Vgs(th)): 3V max at 250μA
Power Dissipation: 2.5W
Quality and Safety Features
Manufactured using onsemi's advanced MOSFET technology
Meets strict quality and reliability standards
Suitable for industrial and automotive applications
Compatibility
Designed for use in a variety of power management and control circuits
Compatible with standard MOSFET drivers and control ICs
Application Areas
Switch-mode power supplies
Motor drives
Battery charging and management systems
Industrial and automotive power electronics
Product Lifecycle
Current production device, not approaching end-of-life
Replacement devices and upgrades are available from onsemi
Key Reasons to Choose This Product
Excellent power efficiency and switching performance
Compact and space-saving 8-SOIC package
Wide operating temperature range for rugged applications
Proven reliability and quality from onsemi
Suitable for a wide range of power management and control applications