HUF76639S3ST - onsemi

Manufacturer Part Number

HUF76639S3ST

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device, specifically a transistor - FET (Field-Effect Transistor), MOSFET (Metal-Oxide-Semiconductor FET) - Single.

Product Features and Performance

N-Channel MOSFET

100V Drain-Source Voltage

±16V Gate-Source Voltage

26mOhm On-Resistance at 51A, 10V

51A Continuous Drain Current at 25°C

2400pF Input Capacitance at 25V

180W Power Dissipation

Product Advantages

High efficiency and low power loss

Fast switching and low on-resistance

Wide operating temperature range (-55°C to 175°C)

Suitable for high-power and high-frequency applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±16V

On-Resistance (Rds(on)): 26mOhm @ 51A, 10V

Continuous Drain Current (Id): 51A @ 25°C

Input Capacitance (Ciss): 2400pF @ 25V

Power Dissipation (Ptot): 180W @ Tc

Quality and Safety Features

ROHS3 Compliant

Housed in DPAK (TO-263) package for surface mount

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and systems that require high-power, high-frequency, and efficient switching capabilities.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and automotive electronics

Product Lifecycle

This product is an active and currently available part from onsemi. There are no plans for discontinuation, and replacement or upgrade options may be available.

Key Reasons to Choose This Product

High efficiency and low power loss for improved system performance

Fast switching and low on-resistance for high-frequency and high-power applications

Wide operating temperature range (-55°C to 175°C) for use in demanding environments

Robust DPAK (TO-263) package for reliable surface mount assembly

Compatibility with a wide range of electronic circuits and systems