HUF76407D3ST - onsemi

Manufacturer Part Number

HUF76407D3ST

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET transistor

Product Features and Performance

Wide operating temperature range of -55°C to 175°C

Low on-resistance (RDS(on)) of 92 mΩ @ 13A, 10V

High drain current (ID) of 12A at 25°C

Low input capacitance (Ciss) of 350 pF @ 25V

Fast switching speed and low gate charge (Qg) of 11.3 nC @ 10V

Product Advantages

Efficient power conversion and high power density

Improved system reliability and performance

Reduced energy consumption and heat dissipation

Key Technical Parameters

Drain-to-Source Voltage (VDS): 60V

Gate-to-Source Voltage (VGS): ±16V

Threshold Voltage (VGS(th)): 3V @ 250A

Drive Voltage (Max RDS(on), Min RDS(on)): 4.5V, 10V

Quality and Safety Features

RoHS3 compliant

TO-252AA package with increased thermal and mechanical reliability

Compatibility

Compatible with various power electronics and control systems

Application Areas

Power supplies, motor drives, inverters, and other power conversion applications

Product Lifecycle

Current product offering, no discontinuation or replacement expected in the near future

Key Reasons to Choose

Excellent power efficiency and thermal performance

Robust and reliable design for demanding applications

Proven track record and support from onsemi

Broad compatibility and suitability for a wide range of power electronics systems