HUF75345P3 - onsemi

Manufacturer Part Number

HUF75345P3

Manufacturer

onsemi

Introduction

This is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor from the UltraFET series.

Product Features and Performance

55V Drain-Source Voltage (Vdss)

±20V Gate-Source Voltage (Vgs)

7mΩ Maximum On-Resistance (Rds(on)) at 75A, 10V

75A Continuous Drain Current (Id) at 25°C

4000pF Maximum Input Capacitance (Ciss) at 25V

325W Maximum Power Dissipation at Tc

Product Advantages

Low on-resistance for high efficiency

High current capability

Wide operating temperature range (-55°C to 175°C)

Robust MOSFET technology

Key Technical Parameters

MOSFET (Metal Oxide) technology

N-Channel FET type

4V Maximum Gate-Source Threshold Voltage (Vgs(th)) at 250A

10V Drive Voltage for Minimum and Maximum Rds(on)

275nC Maximum Gate Charge (Qg) at 20V

Quality and Safety Features

RoHS3 compliant

TO-220-3 package for through-hole mounting

Compatibility

This MOSFET is designed for a wide range of applications that require a high-performance, high-current switching device.

Application Areas

Power supplies

Motor drives

Industrial controls

Automotive electronics

Product Lifecycle

This product is currently in active production and availability. There are no plans for discontinuation at this time, and replacement or upgrade options are available if needed.

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance, high current capability, and wide operating temperature range

Robust and reliable MOSFET technology

Compliance with RoHS3 regulations for environmental sustainability

Compatibility with a wide range of applications that require high-performance switching devices