HN1B01FDW1T1G - onsemi

Manufacturer Part Number

HN1B01FDW1T1G

Manufacturer

onsemi

Introduction

High-performance bipolar junction transistor (BJT) array in a compact SOT-457 package

Designed for use in electronic circuits and applications

Product Features and Performance

Optimized for high-frequency, high-speed switching applications

Excellent current gain and high voltage/current handling capabilities

Reliable performance across a wide temperature range (-55°C to 150°C)

Low collector-emitter saturation voltage for efficient power delivery

Product Advantages

Space-saving surface-mount package

High current and voltage ratings

Robust thermal performance

Stable electrical characteristics

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 50V

Collector Current (Max): 200mA

Collector Cutoff Current (Max): 2A

DC Current Gain (hFE) (Min): 200 @ 2mA, 6V

Collector-Emitter Saturation Voltage (Max): 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Can be used in a wide range of electronic circuits and applications

Application Areas

High-speed switching circuits

Amplifier and driver circuits

Instrumentation and control systems

Power management and regulation circuits

Product Lifecycle

Current product offering, no indication of discontinuation

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

High-performance and space-efficient BJT array

Reliable operation across a wide temperature range

Excellent current gain and voltage/current handling capabilities

Efficient power delivery through low saturation voltage

Compatibility with a wide range of electronic applications