HGTD1N120BNS9A - onsemi

Manufacturer Part Number

HGTD1N120BNS9A

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single IGBT Transistor

Product Features and Performance

NPT IGBT Type

Collector-Emitter Breakdown Voltage (Max): 1200V

Collector Current (Max): 5.3A

Collector-Emitter Saturation Voltage (Max): 2.9V @ 15V, 1A

Gate Charge: 14nC

Pulsed Collector Current (Max): 6A

Turn-on/Turn-off Delay Time: 15ns/67ns

Switching Energy: 70μJ (on), 90μJ (off)

Product Advantages

High voltage and current handling capability

Low on-state voltage

Fast switching speed

Compact surface mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200V

Current Collector (Max): 5.3A

Vce(on) (Max): 2.9V @ 15V, 1A

Gate Charge: 14nC

Td (on/off) @ 25°C: 15ns/67ns

Quality and Safety Features

RoHS3 Compliant

TO-252AA package

Compatibility

Compatible with standard IGBT gate drive circuits

Application Areas

Motor drives

Power conversion

Inverters

Welding equipment

Industrial and consumer electronics

Product Lifecycle

Current product offering, no plans for discontinuation

Several Key Reasons to Choose This Product

High voltage and current handling capability

Low on-state voltage for efficient power conversion

Fast switching speed for high-frequency applications

Compact surface mount package for space-constrained designs

RoHS3 compliance for use in a wide range of applications