Manufacturer Part Number
FQPF65N06
Manufacturer
onsemi
Introduction
The FQPF65N06 is a high-performance N-channel MOSFET transistor designed for a variety of power management and switching applications.
Product Features and Performance
High voltage rating of 60V
Low on-state resistance of 16mΩ at 20A, 10V
High current capability of 40A at 25°C
Wide operating temperature range of -55°C to 175°C
Optimized gate charge of 65nC at 10V
Fast switching performance
Product Advantages
Excellent efficiency and power density
Reliable and robust design
Suitable for high-power applications
Easy to drive and integrate
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±25V
On-State Resistance (Rds(on)): 16mΩ @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 2410pF @ 25V
Power Dissipation (Tc): 56W
Quality and Safety Features
RoHS3 compliant
Rugged and reliable design
Meets industry safety and quality standards
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High performance and efficiency
Reliable and robust design
Suitable for high-power applications
Easy to drive and integrate
Wide operating temperature range
Optimized for power density and switching speed
FQPF60N03LVBSEMI