FQPF11P06 - onsemi

Manufacturer Part Number

FQPF11P06

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

P-Channel MOSFET Transistor

Product Features and Performance

Through-Hole Mounting

Operating Temperature Range: -55°C to 175°C

Drain to Source Voltage (Vdss): 60V

Gate to Source Voltage (Vgs Max): ±25V

Drain-Source On-Resistance (Rds(on) Max): 175mΩ @ 4.3A, 10V

Continuous Drain Current (Id): 8.6A @ 25°C

Input Capacitance (Ciss Max): 550pF @ 25V

Power Dissipation (Max): 30W

Product Advantages

Low on-resistance for efficient power switching

Wide temperature range for diverse applications

High voltage and current ratings for high-power use

Key Technical Parameters

MOSFET Technology

P-Channel FET Type

Threshold Voltage (Vgs(th) Max): 4V @ 250A

Drive Voltage (Max Rds(on), Min Rds(on)): 10V

Gate Charge (Qg Max): 17nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a variety of power electronics and motor control applications

Application Areas

Power supplies, motor drives, and other high-power switching circuits

Product Lifecycle

Current production, no discontinuation plans

Key Reasons to Choose

Excellent performance characteristics for high-power switching

Wide operating temperature range for versatile applications

Efficient power handling with low on-resistance

Reliable and RoHS-compliant design