Manufacturer Part Number
FQP55N10
Manufacturer
onsemi
Introduction
The FQP55N10 is a high-performance N-channel MOSFET transistor designed for a wide range of power switching applications.
Product Features and Performance
100V drain-to-source voltage rating
55A continuous drain current at 25°C
Very low on-state resistance of 26mΩ
High input capacitance of 2730pF
Wide operating temperature range of -55°C to 175°C
Robust TO-220-3 package
Product Advantages
Excellent efficiency and low power losses
High current handling capability
Reliable and durable design
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±25V
On-State Resistance (Rds(on)): 26mΩ
Continuous Drain Current (Id): 55A
Input Capacitance (Ciss): 2730pF
Power Dissipation (Pd): 155W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Power switching
Motor control
Power supplies
Industrial automation
Product Lifecycle
The FQP55N10 is an active and widely available product.
Replacement or upgrade options are readily available from onsemi and other manufacturers.
Key Reasons to Choose This Product
Excellent performance and efficiency
High current handling capability
Reliable and durable design
Suitable for a wide range of power electronics applications
Readily available and supported by the manufacturer
