Manufacturer Part Number
FQP4N90C
Manufacturer
onsemi
Introduction
The FQP4N90C is a high-voltage, N-channel power MOSFET transistor from onsemi, suitable for a variety of power switching and control applications.
Product Features and Performance
High voltage rating of 900V
Low on-resistance of 4.2Ω at 2A, 10V
Continuous drain current of 4A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 960pF at 25V
Maximum power dissipation of 140W at 25°C
Product Advantages
Excellent switching performance for high-voltage applications
Robust design for reliable operation
Compact TO-220-3 package for easy integration
Key Technical Parameters
Drain-Source Voltage (Vdss): 900V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.2Ω @ 2A, 10V
Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 960pF @ 25V
Power Dissipation: 140W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable through-hole mounting
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Appliances
Automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose
Excellent high-voltage performance
Low on-resistance for efficient power conversion
Robust and reliable design
Easy integration with TO-220-3 package
Wide operating temperature range for versatile applications