Manufacturer Part Number
FQP44N10
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET device suitable for various power conversion and switching applications
Product Features and Performance
High breakdown voltage of 100V
Ultra-low on-resistance of 39mΩ @ 21.75A, 10V
High continuous drain current of 43.5A @ 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 1800pF @ 25V
High power dissipation capability of 146W
Product Advantages
Excellent efficiency and reduced power losses
Compact and space-saving design
Reliable operation in high-temperature environments
Suitable for high-current, high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100V
Gate-to-Source Voltage (VGS): ±25V
Continuous Drain Current (ID): 43.5A @ 25°C
On-State Resistance (RDS(on)): 39mΩ @ 21.75A, 10V
Input Capacitance (Ciss): 1800pF @ 25V
Power Dissipation (Ptot): 146W
Quality and Safety Features
RoHS3 compliant
Suitable for various safety-critical applications
Compatibility
Direct replacement for a wide range of N-channel power MOSFETs in power conversion and switching circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Electric vehicles
Industrial automation and control
Product Lifecycle
This product is currently in production and widely available
Replacements and upgrades may be introduced in the future as technology advances
Several Key Reasons to Choose This Product
Excellent efficiency and low power losses for improved system performance
High power handling capability and reliability for demanding applications
Wide operating temperature range for use in diverse environments
Compact and space-saving design for easy integration
RoHS compliance for use in environmentally-friendly applications
