Manufacturer Part Number
FQP30N06L
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
60V Drain-Source Voltage (Vdss)
32A Continuous Drain Current (Id) at 25°C
35mΩ Maximum On-Resistance (Rds(on)) at 16A, 10V
1040pF Maximum Input Capacitance (Ciss) at 25V
79W Maximum Power Dissipation at 25°C
-55°C to 175°C Operating Temperature Range
Product Advantages
Low On-Resistance for Efficient Power Switching
High Continuous Drain Current Capability
Wide Operating Temperature Range
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
Drain Current (Id): 32A at 25°C
On-Resistance (Rds(on)): 35mΩ at 16A, 10V
Input Capacitance (Ciss): 1040pF at 25V
Power Dissipation: 79W at 25°C
Quality and Safety Features
RoHS3 Compliant
TO-220-3 Packaging
Compatibility
Through-Hole Mounting
Application Areas
Power Switching Applications
Motor Control
Power Supplies
Industrial Electronics
Product Lifecycle
Current Production
Replacement/Upgrade Options Available
Key Reasons to Choose
Efficient Power Switching with Low On-Resistance
High Continuous Drain Current Capability
Wide Operating Temperature Range
RoHS3 Compliance for Environmental Responsibility
FQP32N20Fairchild (onsemi)