Manufacturer Part Number
FQP27P06
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single P-Channel MOSFET Transistor
Product Features and Performance
P-Channel MOSFET with high current capability
60V drain-to-source voltage rating
Low on-resistance of 70mΩ @ 13.5A, 10V
High input capacitance of 1400pF @ 25V
120W maximum power dissipation
Product Advantages
Excellent performance for high current switching and amplification applications
Efficient power handling capabilities
Reliable operation across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±25V
Continuous Drain Current (Id): 27A @ 25°C
On-Resistance (Rds(on)): 70mΩ @ 13.5A, 10V
Input Capacitance (Ciss): 1400pF @ 25V
Power Dissipation (Ptot): 120W @ Tc
Quality and Safety Features
RoHS3 compliant
Qualified for industrial, automotive, and other high-reliability applications
Robust TO-220-3 package for enhanced thermal management
Compatibility
Compatible with a wide range of control circuits and power supplies
Application Areas
High current switching
Power amplification
Industrial motor control
Automotive electronics
Product Lifecycle
Current production, no known plans for discontinuation
Replacements and upgrades available within onsemi's QFET series
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for high current applications
Proven reliability and long-term availability from a reputable manufacturer
Wide temperature range and robust packaging for demanding environments
Efficient power handling capabilities for improved system efficiency
