Manufacturer Part Number
FQD7N10LTM
Manufacturer
onsemi
Introduction
The FQD7N10LTM is a single N-channel MOSFET transistor in a TO-252 package.
Product Features and Performance
100V Drain-Source Voltage
350mΩ Typical On-Resistance
8A Continuous Drain Current
-55°C to 150°C Operating Temperature Range
Low Gate Charge of 6nC at 5V
Fast Switching Characteristics
Product Advantages
Excellent Power Handling Capability
High Frequency Operation
Compact TO-252 Package
Low On-Resistance for Efficient Power Conversion
Wide Temperature Range Suitability
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 350mΩ
Continuous Drain Current (Id): 5.8A
Input Capacitance (Ciss): 290pF
Power Dissipation (Pd): 2.5W (Ta), 25W (Tc)
Quality and Safety Features
RoHS3 Compliant
TO-252 Package with Solder Tabs for Improved Thermal Dissipation
Compatibility
Suitable for Surface Mount Applications
Application Areas
Switch Mode Power Supplies
Motor Drives
Inverters
Lighting Ballasts
General Power Switching Applications
Product Lifecycle
This product is currently in active production and available for purchase.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Wide operating temperature range for diverse applications
Fast switching characteristics enable high-frequency operation
Compact TO-252 package with solder tabs for improved thermal management
RoHS3 compliance for environmentally-conscious designs