Manufacturer Part Number
FQD13N10TM
Manufacturer
onsemi
Introduction
The FQD13N10TM is a N-Channel MOSFET transistor from onsemi, designed for a variety of power management and control applications.
Product Features and Performance
100V Drain-Source Voltage
180mΩ maximum on-resistance at 5A, 10V
10A continuous drain current at 25°C
450pF maximum input capacitance at 25V
16nC maximum gate charge at 10V
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for improved efficiency
High voltage and current ratings for versatile applications
Small TO-252 package for compact designs
Suitable for both low-side and high-side switching
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 180mΩ @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with various power management and control circuits
Application Areas
Power supplies
Motor drives
Lighting controls
Industrial automation
Product Lifecycle
Current production, not nearing discontinuation
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Reliable and robust design
Wide operating temperature range
Suitable for a variety of power management applications