Manufacturer Part Number
FQB6N80TM
Manufacturer
onsemi
Introduction
High voltage, high speed MOSFET transistor
Product Features and Performance
800V drain-to-source voltage rating
Low on-resistance of 1.95 ohms
Continuous drain current of 5.8A at 25°C
Operating temperature range of -55°C to 150°C
Fast switching speed
Low gate charge of 31nC at 10V
Product Advantages
Excellent high voltage and high current handling capability
Efficient power conversion with low on-resistance
Wide temperature range for reliability in demanding applications
Fast switching for high frequency operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.95 ohms
Continuous Drain Current (Id): 5.8A
Input Capacitance (Ciss): 1500pF
Power Dissipation: 3.13W (Ta), 158W (Tc)
Quality and Safety Features
ROHS3 compliant
Qualified for safety critical applications
Compatibility
Surface mount DPAK (TO-263) package
Compatible with standard MOSFET drivers and control circuits
Application Areas
Switched-mode power supplies
Motor drives
Inverters
High voltage/high power applications
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available from onsemi as technology evolves.
Key Reasons to Choose This Product
Excellent high voltage and high current handling capability
Efficient power conversion with low on-resistance
Wide temperature range for reliability in demanding applications
Fast switching for high frequency operation
Qualified for safety critical applications
Compatibility with standard MOSFET control and driver circuits
