Manufacturer Part Number
FQB30N06LTM
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Current Continuous Drain (Id) @ 25°C: 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5V
Product Advantages
Low on-resistance
High power handling capability
Suitable for high-current switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Current Continuous Drain (Id) @ 25°C: 32A (Tc)
Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C ~ 175°C (TJ)
Compatibility
Surface Mount
DPAK (TO-263) Package
Application Areas
High-current switching applications
Power supplies
Motor drives
Industrial equipment
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Low on-resistance for efficient power conversion
High power handling capability
Suitable for high-current switching applications
Reliable operation over wide temperature range
FQB33N10 MOSAMI Semiconductor/onsemi