Manufacturer Part Number
FQB12P20TM
Manufacturer
onsemi
Introduction
High-performance P-channel power MOSFET
Product Features and Performance
High voltage capability (200V drain-source voltage)
Low on-resistance (470 mΩ)
High current handling (11.5A continuous drain current)
Low gate charge (40 nC)
Wide operating temperature range (-55°C to 150°C)
Suitable for various power conversion and control applications
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable and robust design for high-stress applications
Versatile usage across a wide range of voltages and currents
Key Technical Parameters
Drain-source voltage (Vdss): 200V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 470 mΩ
Continuous drain current (Id): 11.5A
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for efficient heat dissipation
Compatibility
Suitable for various power electronics and control applications
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Reliable and robust design for high-stress applications
Wide operating temperature range for versatile usage
Suitable for a variety of power conversion and control applications