FQA7N80C - onsemi

Manufacturer Part Number

FQA7N80C

Manufacturer

onsemi

Introduction

High-voltage N-channel MOSFET with low on-resistance and fast switching characteristics.

Product Features and Performance

High voltage rating up to 800 V

Low on-resistance of 1.9 Ω

Capable of 7 A continuous drain current at 25°C

Fast switching speed with low gate charge of 35 nC

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent for high-voltage, high-current switching applications

Efficient power conversion with low conduction losses

Reliable operation in harsh environments

Key Technical Parameters

Drain-Source Voltage (Vdss): 800 V

Gate-Source Voltage (Vgs): ±30 V

On-Resistance (Rds(on)): 1.9 Ω

Continuous Drain Current (Id): 7 A

Input Capacitance (Ciss): 1680 pF

Power Dissipation (Tc): 198 W

Quality and Safety Features

Robust TO-3P metal package for reliable operation

Designed and manufactured to high quality standards

Tested for safety and reliability

Compatibility

Suitable for a wide range of high-voltage, high-current applications

Can be used as a replacement or upgrade for similar MOSFET devices

Application Areas

Switching power supplies

Motor drives

Industrial control systems

Telecommunications equipment

Welding equipment

Product Lifecycle

This product is currently in active production

Replacement or upgrade options are available for future product needs

Key Reasons to Choose This Product

Excellent performance and efficiency for high-voltage, high-current applications

Reliable and durable operation in harsh environments

Cost-effective solution for power conversion and control applications

Wide availability and compatibility with various systems