Manufacturer Part Number
FQA47P06
Manufacturer
onsemi
Introduction
High-power P-channel enhancement-mode MOSFET
Product Features and Performance
P-channel MOSFET with high current handling capability
Low on-resistance for high efficiency
Fast switching speed
Wide operating temperature range (-55°C to 175°C)
High drain-to-source voltage rating (60V)
Low gate-to-source voltage (±25V)
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable operation across wide temperature range
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 26mΩ @ 27.5A, 10V
Continuous Drain Current (Id): 55A @ 25°C
Input Capacitance (Ciss): 3600pF @ 25V
Power Dissipation (Ptot): 214W @ Tc
Quality and Safety Features
MOSFET technology for high reliability
Through-hole mounting for secure connection
Compatibility
TO-3P package for easy integration into existing designs
Application Areas
High-power switching applications
Industrial equipment
Power supplies
Motor drives
Product Lifecycle
This product is currently in production and widely available
No plans for discontinuation, with onsemi continuing to support the product line
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Wide operating temperature range for reliable operation in challenging environments
High current handling capability for demanding applications
Fast switching speed for efficient power conversion
Compatibility with standard TO-3P package for easy integration
FQA4P06FSC