FMG1G50US60L - onsemi

Manufacturer Part Number

FMG1G50US60L

Manufacturer

onsemi

Introduction

IGBT (Insulated Gate Bipolar Transistor) module

Suitable for medium power applications

Product Features and Performance

Operating temperature range: -40°C to 150°C (TJ)

Maximum power rating: 250 W

Input type: Standard

Configuration: Single IGBT

Input capacitance (Cies) @ 30 V: 3.46 nF

Maximum collector-emitter breakdown voltage: 600 V

No NTC (Negative Temperature Coefficient) thermistor

Maximum collector current (Ic): 50 A

Maximum collector-emitter saturation voltage (Vce(on)) @ 15 V, 50 A: 2.8 V

Maximum collector cutoff current: 250 A

Product Advantages

Suitable for medium power applications

Wide operating temperature range

High voltage and current handling capability

Key Technical Parameters

Collector-emitter breakdown voltage: 600 V

Collector current (Ic): 50 A

Collector-emitter saturation voltage (Vce(on)): 2.8 V @ 15 V, 50 A

Quality and Safety Features

Chassis mount package (7PM-GA)

Compatibility

Can be used in a variety of medium power applications

Application Areas

Suitable for medium power applications, such as industrial control, motor drives, and power supplies

Product Lifecycle

Currently available

No information on discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

Wide operating temperature range (-40°C to 150°C)

High voltage and current handling capability

Suitable for medium power applications

Chassis mount package for easy installation