FMB2222A - onsemi

Manufacturer Part Number

FMB2222A

Manufacturer

onsemi

Introduction

Dual NPN Bipolar Junction Transistor (BJT) Array

Product Features and Performance

High transition frequency of 300MHz

Very low collector-emitter saturation voltage (Vce(sat)) of 1V @ 500mA

Wide operating temperature range of -55°C to 150°C

High collector current rating of 500mA

Low collector cutoff current of 10nA

High DC current gain (hFE) of 100 @ 150mA, 10V

Product Advantages

Excellent high-frequency performance

Efficient power handling

Wide temperature tolerance

Reliable and durable

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40V

Collector Current (IC): 500mA

Collector Cutoff Current (ICBO): 10nA

DC Current Gain (hFE): 100 @ 150mA, 10V

Transition Frequency (fT): 300MHz

Power Dissipation (Pd): 700mW

Quality and Safety Features

RoHS3 compliant

Manufactured in a quality-controlled environment

Compatibility

Suitable for a variety of high-frequency and power-sensitive applications

Application Areas

Amplifiers

Switches

Logic gates

Drivers

Radio frequency (RF) circuits

Product Lifecycle

This product is currently in production and readily available

No discontinuation or replacement plans announced at this time

Key Reasons to Choose This Product

High-performance dual transistor array with excellent frequency response and power handling

Reliable and durable design with wide temperature tolerance

Optimized for efficient and high-frequency circuit applications

RoHS3 compliant for environmentally-conscious design

Readily available and supported by the manufacturer