Manufacturer Part Number
FJP5027OTU
Manufacturer
onsemi
Introduction
High-voltage, high-power NPN bipolar junction transistor (BJT) for power switching and amplification applications.
Product Features and Performance
High voltage rating of 800V
High power handling capability of 50W
High current rating of up to 10A
High DC current gain (hFE) of at least 20
Transition frequency of 15MHz
Low collector-emitter saturation voltage (VCE(sat)) of 2V @ 1.5A
Product Advantages
Suitable for high-voltage, high-power switching and amplification circuits
Robust design with high reliability
Efficient power handling and thermal performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 800V
Collector Current (IC): 3A
Collector Cutoff Current (ICBO): 10A
DC Current Gain (hFE): 20 (min)
Transition Frequency (fT): 15MHz
Power Dissipation (Pd): 50W
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable thermal management
Compatibility
This transistor is widely compatible with various high-voltage, high-power electronic circuits and applications.
Application Areas
Power supplies
Motor drives
Inverters
Amplifiers
Switching regulators
Industrial electronics
Product Lifecycle
The FJP5027OTU is an active and currently available product from onsemi. No discontinuation or replacement plans have been announced.
Key Reasons to Choose This Product
High voltage and power handling capability
Robust and reliable design
Efficient thermal performance
Suitable for a wide range of high-power applications
Compatibility with various electronic circuits
Ongoing availability and support from the manufacturer
FJP50270TUFAIRCILD