Manufacturer Part Number
FJC2383YTF
Manufacturer
onsemi
Introduction
This is a discrete semiconductor product, specifically a bipolar junction transistor (BJT) in a single package.
Product Features and Performance
Rated for a maximum collector-emitter voltage of 160V
Maximum collector current of 1A
Maximum power dissipation of 500mW
Operating temperature range up to 150°C
High DC current gain (hFE) of at least 160 at 200mA and 5V
Transition frequency of 100MHz
Product Advantages
Compact surface mount package (SOT-89-3)
Reliable performance in high voltage and high current applications
Suitable for a wide range of operating temperatures
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 160V
Collector Current (IC): 1A
Power Dissipation: 500mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE): Min. 160 @ 200mA, 5V
Quality and Safety Features
Manufactured by a reputable semiconductor company, onsemi
Meets industry standards for quality and reliability
Compatibility
Suitable for use in a variety of electronic circuits and applications
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Automotive electronics
Industrial control systems
Product Lifecycle
This product is currently in active production and widely available.
Replacement or upgraded options may become available in the future, but this model is not nearing discontinuation.
Several Key Reasons to Choose This Product
Reliable high voltage and high current performance
Compact surface mount packaging for space-constrained designs
Wide operating temperature range for versatile applications
High DC current gain and transition frequency for efficient operation
Manufactured by a reputable semiconductor company, ensuring quality and reliability