Manufacturer Part Number
FGP15N60UNDF
Manufacturer
onsemi
Introduction
The FGP15N60UNDF is a high-performance IGBT (Insulated Gate Bipolar Transistor) from onsemi, a leading manufacturer of semiconductor devices.
Product Features and Performance
High voltage capability up to 600V
High current handling up to 30A continuous and 45A pulsed
Low on-state voltage drop of 2.7V at 15A
Fast switching speed with turn-on time of 9.3ns and turn-off time of 54.8ns
Low reverse recovery time of 82.4ns
Wide operating temperature range of -55°C to 150°C
High power handling capability up to 178W
Product Advantages
Improved efficiency and reduced power losses
Reliable and robust design for demanding applications
Compact and easy to integrate TO-220-3 package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Continuous/Pulsed): 30A/45A
On-state Voltage Drop (Vce(on)): 2.7V @ 15V, 15A
Reverse Recovery Time (trr): 82.4ns
Gate Charge: 43nC
Switching Energy (Eon/Eoff): 370μJ/67μJ
Quality and Safety Features
RoHS3 compliant for environmentally-friendly design
Through-hole mounting for secure and reliable installation
Compatibility
The FGP15N60UNDF is a direct replacement for various IGBT devices used in power electronics applications.
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
The FGP15N60UNDF is a currently available and actively supported product from onsemi. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance and efficiency for power electronics applications
Robust and reliable design for demanding operating conditions
Easy integration and compatibility with various systems
Manufacturer's reputation for quality and technical support
Wide range of application areas and compatibility
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