Manufacturer Part Number
FDY100PZ
Manufacturer
onsemi
Introduction
P-Channel MOSFET transistor designed for power management and control applications
Product Features and Performance
20V Drain to Source Voltage (Vdss)
±8V Gate to Source Voltage (Vgs)
2Ω Drain-Source On-Resistance (Rds(on)) at 350mA, 4.5V
350mA Continuous Drain Current (Id) at 25°C
100pF Input Capacitance (Ciss) at 10V
625mW Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
PowerTrench MOSFET technology for high efficiency
Optimized for power management and control applications
Small SC-89 surface mount package
Key Technical Parameters
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
P-Channel type
8V to 4.5V Drive Voltage range
4nC Gate Charge (Qg) at 4.5V
Quality and Safety Features
RoHS3 compliant
SC-89-3 package
Compatibility
Compatible with various power management and control applications
Application Areas
Power management circuits
Motor control
Battery charging and discharging
General purpose power switching
Product Lifecycle
This product is currently in production and available
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High efficiency PowerTrench MOSFET technology
Optimized for power management and control applications
Small surface mount package for compact designs
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmental regulations