Manufacturer Part Number
FDT86246L
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET for general-purpose power switching applications
Product Features and Performance
150V drain-to-source voltage rating
228mΩ typical on-resistance at 2A, 10V gate drive
2A continuous drain current rating at 25°C
Low input capacitance of 335pF
Low gate charge of 6.3nC at 10V gate drive
Product Advantages
Excellent on-resistance and power handling capability
Fast switching speed
Low gate charge for efficient switching
Robust, reliable construction
Key Technical Parameters
Drain-to-source voltage (Vdss): 150V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 228mΩ @ 2A, 10V
Drain current (Id): 2A continuous at 25°C
Input capacitance (Ciss): 335pF @ 75V
Power dissipation (Pd): 1W at 25°C
Quality and Safety Features
ROHS3 compliant
Reliable SOT-223-4 package
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
General-purpose power switching
Motor control
DC-DC converters
Automotive electronics
Product Lifecycle
Current production, no known discontinuation plans
Replacements and upgrades available from onsemi
Key Reasons to Choose
Excellent performance-to-cost ratio
Proven reliability and ruggedness
Wide operating temperature range of -55°C to 150°C
Available in convenient surface-mount package