Manufacturer Part Number
FDS8858CZ
Manufacturer
onsemi
Introduction
The FDS8858CZ is a dual N-channel and P-channel enhancement-mode power MOSFET array in an 8-SOIC package.
Product Features and Performance
N and P-Channel MOSFET Array
30V Drain-Source Voltage
17mΩ Maximum On-Resistance
6A Continuous Drain Current
1205pF Maximum Input Capacitance
24nC Maximum Gate Charge
Logic Level Gate
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Compact 8-SOIC package
Suitable for space-constrained applications
Low on-resistance for efficient power conversion
Excellent switching characteristics
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 17mΩ
Continuous Drain Current (Id): 8.6A
Input Capacitance (Ciss): 1205pF
Gate Charge (Qg): 24nC
Quality and Safety Features
RoHS3 Compliant
Suitable for safety-critical applications
Compatibility
Designed for surface mount applications
Application Areas
Power management circuits
Motor control
Battery charging and protection
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchasing.
No information regarding discontinuation or availability of replacements/upgrades.
Key Reasons to Choose This Product
Compact 8-SOIC package for space-constrained designs
Low on-resistance for efficient power conversion
Excellent switching characteristics for high-performance power management
Wide operating temperature range for versatile applications
RoHS3 compliance for use in safety-critical applications