Manufacturer Part Number
FDS8812NZ
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET in 8-SOIC package
Product Features and Performance
Very low on-resistance (4 mOhm @ 20 A, 10 V)
High continuous drain current (20 A @ 25°C)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (6,925 pF @ 15 V)
Low gate charge (126 nC @ 10 V)
Product Advantages
Excellent efficiency and thermal performance
Compact 8-SOIC surface mount package
Suitable for high-current, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 4 mOhm @ 20 A, 10 V
Continuous Drain Current (Id): 20 A @ 25°C
Input Capacitance (Ciss): 6,925 pF @ 15 V
Power Dissipation (Max): 2.5 W
Quality and Safety Features
Robust PowerTrench MOSFET technology
Complies with RoHS and REACH directives
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
DC-DC converters
Power amplifiers
Lighting ballasts
Product Lifecycle
The FDS8812NZ is an active product with no known plans for discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose this Product
Excellent performance-to-size ratio in a compact 8-SOIC package
Highly efficient and thermally robust design
Suitable for high-current, high-frequency switching applications
Proven reliability and long-term availability from a leading semiconductor manufacturer
