Manufacturer Part Number
FDS6994S
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 N-Channel (Dual) MOSFET
30V Drain to Source Voltage (Vdss)
21mOhm Rds On (Max) @ 6.9A, 10V
800pF Input Capacitance (Ciss) (Max) @ 15V
12nC Gate Charge (Qg) (Max) @ 5V
9A, 8.2A Continuous Drain (Id) @ 25°C
-55°C ~ 150°C (TJ) Operating Temperature
Product Advantages
PowerTrench, SyncFET technology
Logic Level Gate FET Feature
Surface Mount Mounting Type
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 6.9A, 10V
Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Quality and Safety Features
900mW Power Max
-55°C ~ 150°C (TJ) Operating Temperature
Compatibility
8-SOIC (0.154", 3.90mm Width) Packaging
Tape & Reel (TR) Packaging
Application Areas
Suitable for various power management and control applications
Product Lifecycle
Currently available product
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
PowerTrench and SyncFET technology for improved performance
Logic Level Gate FET feature for easy integration
Surface mount packaging for compact design
Wide operating temperature range of -55°C to 150°C
High current handling capability up to 8.2A
Low on-resistance of 21mOhm