Manufacturer Part Number
FDS6982S
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 N-Channel (Dual) MOSFET
Power Max: 900mW
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Current Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Product Advantages
Low on-resistance
Dual N-Channel MOSFET design
Logic level gate
Suitable for high current applications
Key Technical Parameters
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Quality and Safety Features
Manufacturer's packaging: 8-SOIC
Supplier Device Package: 8-SOIC
Compatibility
Compatible with various electronic devices and circuits that require high-performance dual N-Channel MOSFETs
Application Areas
Suitable for various power management and control applications, such as motor drivers, power supplies, and voltage regulators
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent low on-resistance performance
Dual N-Channel MOSFET design for efficient power management
Logic level gate for easy integration with control circuits
Wide operating temperature range
Reliable and durable surface mount package
Suitable for a variety of high current applications
