Manufacturer Part Number
FDS6692A
Manufacturer
onsemi
Introduction
The FDS6692A is a high-performance N-channel power MOSFET in a small 8-SOIC surface-mount package. It offers excellent on-resistance and gate charge characteristics, making it suitable for a variety of power conversion and switching applications.
Product Features and Performance
Low on-resistance (Rds(on) = 11.5 mΩ @ 9 A, 10 V)
High current capability (Id = 9 A @ 25°C)
Low gate charge (Qg = 29 nC @ 10 V)
Wide operating temperature range (-55°C to 150°C)
Fast switching speed
Robust design for high reliability
Product Advantages
Compact 8-SOIC surface-mount package
Excellent thermal management
Optimized for high-efficiency power conversion
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Input Capacitance (Ciss): 1610 pF @ 15 V
Power Dissipation (Ptot): 1.47 W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Thorough testing and quality control
Compatibility
The FDS6692A is compatible with a wide range of power electronics and power conversion applications.
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Lighting ballasts
Industrial automation and control
Telecommunications equipment
Product Lifecycle
The FDS6692A is an active product and is not nearing discontinuation. Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
Excellent on-resistance and gate charge performance for high-efficiency power conversion
Compact and thermally efficient 8-SOIC package
Wide operating temperature range for reliable operation in diverse environments
Robust design for high reliability and long service life
Compatibility with a wide range of power electronics applications
FDS6692A-NLVBSEMI