Manufacturer Part Number
FDS6681Z
Manufacturer
onsemi
Introduction
The FDS6681Z is a P-channel power MOSFET transistor designed for high-performance power switching applications.
Product Features and Performance
30V drain-to-source voltage rating
20A continuous drain current
6mΩ maximum on-resistance
-55°C to 150°C operating temperature range
7540pF maximum input capacitance
5W maximum power dissipation
Fast switching characteristics
Product Advantages
Excellent power handling capability
Low on-resistance for high efficiency
Wide operating temperature range
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 4.6mΩ @ 20A, 10V
Drain Current (Id): 20A
Input Capacitance (Ciss): 7540pF @ 15V
Power Dissipation (Pd): 2.5W
Quality and Safety Features
ROHS3 compliant
Reliable PowerTrench technology
Compatibility
Surface-mount 8-SOIC package
Application Areas
Switch-mode power supplies
Motor drives
Automotive electronics
Industrial equipment
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
High current and power handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Compact surface-mount package for space-constrained designs
Reliable PowerTrench technology for long-term performance
FDS6681Z-NLVBSEMI