Manufacturer Part Number
FDS6680AS
Manufacturer
onsemi
Introduction
The FDS6680AS is a high-performance N-channel MOSFET transistor designed for a variety of power management and switching applications.
Product Features and Performance
Low on-resistance (Rds(on) = 10 mΩ @ 11.5 A, 10 V)
High current capability (11.5 A continuous drain current at 25°C)
Low gate charge (Qg = 30 nC @ 10 V)
Wide operating temperature range (-55°C to 150°C)
Fast switching speed
Tight Vth distribution
Product Advantages
Excellent power efficiency due to low on-resistance
Improved system reliability with high current capability
Reduced gate drive requirements and easier control circuit design
Key Technical Parameters
Drain-to-Source Voltage (Vds): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Input Capacitance (Ciss): 1240 pF @ 15 V
Power Dissipation (Pd): 2.5 W
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Can be used in a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Power converters
Load switching
Product Lifecycle
Current production model
No known plans for discontinuation
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and long-term availability
Easy to integrate into various power management systems
Suitable for a wide range of applications requiring high current and efficiency
FDS6680A-NLVBSEMI