Manufacturer Part Number
FDS6299S
Manufacturer
onsemi
Introduction
N-Channel MOSFET Transistor
Part of the PowerTrench Series
Product Features and Performance
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 21A, 10V
Current Continuous Drain (Id) @ 25°C: 21A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 15 V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Product Advantages
Low on-resistance for efficient power handling
High current capability
High voltage rating
Surface mount packaging for compact designs
Key Technical Parameters
MOSFET (Metal Oxide) technology
N-Channel FET type
8-SOIC (0.154", 3.90mm Width) package
Tape & Reel (TR) packaging
Quality and Safety Features
Operating Temperature: -55°C ~ 150°C (TJ)
Meets safety and reliability standards
Compatibility
Compatible with a wide range of electronic circuits and systems requiring high-performance power handling
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
Industrial and consumer electronics
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power handling capabilities
High efficiency due to low on-resistance
Compact surface mount package
Reliable operation across wide temperature range
Compatibility with various electronic applications
FDS6298-NLVBSEMI