Manufacturer Part Number
FDS4501H
Manufacturer
onsemi
Introduction
The FDS4501H is a dual N-channel and P-channel power MOSFET array in an 8-SOIC package.
Product Features and Performance
N and P-Channel MOSFET array
PowerTrench technology
Low on-resistance
High current capability
Fast switching
Logic level gate
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Space-saving 8-SOIC package
High power density
Reliable performance
Versatile applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V (N-channel), 20V (P-channel)
On-Resistance (RDS(on)): 18mΩ (N-channel), 40mΩ (P-channel)
Continuous Drain Current (ID): 9.3A (N-channel), 5.6A (P-channel)
Input Capacitance (Ciss): 1958pF
Gate Charge (Qg): 27nC
Threshold Voltage (Vgs(th)): 3V
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Suitable for a wide range of applications that require high-performance, low-resistance power MOSFETs.
Application Areas
Power management
Motor control
Switching power supplies
Industrial automation
Telecommunications equipment
Product Lifecycle
The FDS4501H is an active product and there are no plans for discontinuation. Upgrades and replacements may be available in the future.
Key Reasons to Choose This Product
High power density and efficiency
Reliable and durable performance
Versatile applications in power management and control
Ease of design and integration
Manufacturer's reputation for quality and innovation
FDS4480-NLVBSEMI