Manufacturer Part Number
FDPF20N50FT
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a transistor - FET (Field-Effect Transistor), N-Channel MOSFET (Metal-Oxide-Semiconductor FET).
Product Features and Performance
Operating Temperature Range: -55°C to 150°C
Drain to Source Voltage (Vdss): 500V
Maximum Gate-Source Voltage (Vgs): ±30V
Maximum On-State Resistance (Rds(on)): 260mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 3390pF @ 25V
Maximum Power Dissipation: 38.5W @ 25°C
Product Advantages
High breakdown voltage
Low on-state resistance
High current handling capability
Suitable for high-power switching applications
Key Technical Parameters
Technology: MOSFET (Metal-Oxide-Semiconductor FET)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 5V @ 250A
Gate Charge (Qg): 65nC @ 10V
Quality and Safety Features
RoHS3 Compliant
TO-220F-3 package for through-hole mounting
Compatibility
Can be used in a variety of power conversion and switching applications
Application Areas
High-power switching circuits
Motor drives
Power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and available
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
High breakdown voltage for high-voltage applications
Low on-state resistance for efficient power conversion
High current handling capability for high-power applications
Suitable for a wide range of operating temperatures
RoHS3 compliance for use in environmentally-conscious designs