Manufacturer Part Number
FDPF18N50
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Drain-to-Source Voltage (Vdss): 500V
Maximum Gate-to-Source Voltage (Vgs max): ±30V
On-State Resistance (Rds(on)): 265mΩ @ 9A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 2860pF @ 25V
Power Dissipation (Tc): 38.5W
Gate Charge (Qg): 60nC @ 10V
Product Advantages
High Drain-to-Source Voltage
Low On-State Resistance
High Continuous Drain Current
Suitable for High Power Applications
Key Technical Parameters
MOSFET Technology
TO-220-3 Package
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
High Power Switching
Power Supplies
Motor Drives
Inverters
Product Lifecycle
Active Product
Replacement and Upgrade Options Available
Key Reasons to Choose This Product
Excellent Performance in High Power Applications
Reliable and Durable Design
Broad Operating Temperature Range
Compliant with Environmental Regulations
