Manufacturer Part Number
FDPF10N60NZ
Manufacturer
onsemi
Introduction
High-voltage, N-channel MOSFET
Part of the UniFET-II series
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Drain-to-source voltage (Vdss): 600V
Maximum gate-to-source voltage (Vgs): ±25V
On-state resistance (Rds(on)): 750mΩ @ 5A, 10V
Continuous drain current (Id): 10A @ 25°C (Tc)
Input capacitance (Ciss): 1475pF @ 25V
Power dissipation (max): 38W @ 25°C (Tc)
N-channel MOSFET technology
Product Advantages
High voltage and power handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Threshold voltage (Vgs(th)): 5V @ 250μA
Drive voltage (Vgs): 10V
Gate charge (Qg): 30nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-220F-3 package for through-hole mounting
Compatibility
Compatible with a wide range of electronic circuits and systems requiring high-voltage, high-power N-channel MOSFET devices
Application Areas
Power supplies
Motor drives
Inverters
Switching power amplifiers
Industrial and automotive electronics
Product Lifecycle
Current product, no discontinuation expected in the near future
Replacement and upgrade options available from onsemi
Key Reasons to Choose This Product
Excellent voltage and power handling capabilities
Low on-state resistance for efficient power conversion
Wide operating temperature range
Proven reliability and performance in various applications
RoHS3 compliance for environmentally-conscious designs
FDPF10N50CTNOV