Manufacturer Part Number
FDPC8012S
Manufacturer
onsemi
Introduction
Dual N-channel MOSFET in PowerWDFN package
Designed for high-efficiency, high-density power applications
Product Features and Performance
Optimized for low on-resistance and fast switching
Extremely low on-resistance of 7mΩ @ 12A, 4.5V
High current capability of up to 26A
Low input capacitance of 1075pF @ 13V
Logic-level gate drive with Vgs(th) of 2.2V @ 250μA
Low gate charge of 8nC @ 4.5V
Product Advantages
Excellent thermal performance in compact PowerWDFN package
Efficient power delivery with low conduction and switching losses
Enables high-density, high-efficiency power conversion designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 25V
Continuous Drain Current (Id) @ 25°C: 13A, 26A
On-Resistance (Rds(on)) @ 12A, 4.5V: 7mΩ
Input Capacitance (Ciss) @ 13V: 1075pF
Gate Threshold Voltage (Vgs(th)) @ 250μA: 2.2V
Gate Charge (Qg) @ 4.5V: 8nC
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with standard MOSFET driver and control circuits
Application Areas
High-efficiency power supplies
Power factor correction (PFC) circuits
Motor drives
Servo amplifiers
Switching regulators
Product Lifecycle
Currently in production
No plans for discontinuation
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Optimized for low conduction and switching losses
Enables compact and cost-effective power conversion designs
Reliable performance in high-temperature and automotive applications
Supported by onsemi's extensive application expertise and global supply chain