FDP085N10A - onsemi

Manufacturer Part Number

FDP085N10A

Manufacturer

onsemi

Introduction

High-performance power MOSFET designed for high-power, high-frequency switching applications

Product Features and Performance

N-channel MOSFET with TO-220-3 package

Operates in the -55°C to 175°C temperature range

100V drain-to-source voltage rating

5 mOhm maximum on-resistance at 96A, 10V gate-to-source voltage

96A continuous drain current at 25°C

188W maximum power dissipation at 25°C

Product Advantages

Low on-resistance for high efficiency

High power handling capability

Wide operating temperature range

Robust and reliable TO-220 package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 8.5 mOhm

Continuous Drain Current (Id): 96A

Power Dissipation (Pd): 188W

Input Capacitance (Ciss): 2695 pF

Gate Charge (Qg): 40 nC

Quality and Safety Features

Manufactured using onsemi's PowerTrench technology for high reliability

Complies with relevant safety standards

Compatibility

Suitable for high-power, high-frequency switching applications in various industries

Application Areas

Power supplies

Motor drives

Industrial automation

Renewable energy systems

Product Lifecycle

This is an active product, with no plans for discontinuation

Replacement or upgrade options may be available from onsemi

Key Reasons to Choose This Product

Excellent performance with low on-resistance and high power handling

Wide operating temperature range for versatile applications

Robust and reliable TO-220 package

Manufactured using onsemi's proven PowerTrench technology for quality and safety