Manufacturer Part Number
FDP030N06
Manufacturer
onsemi
Introduction
High-performance power MOSFET transistor
Product Features and Performance
N-channel MOSFET design
Optimized for high-current, high-voltage applications
Low on-resistance (RDS(on)) of 3.2 mΩ at 75A, 10V
High current rating of 120A continuous drain current at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge (Qg) of 151 nC at 10V
Product Advantages
Excellent efficiency and power handling capabilities
Robust and reliable performance
Suitable for various high-power applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
Gate-to-Source Voltage (VGS): ±20V
Input Capacitance (Ciss): 9815 pF at 25V
Power Dissipation (Tc): 231W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Through-hole mounting in TO-220-3 package
Application Areas
High-power switching applications
Motor control
Power supplies
Inverters
Converters
Product Lifecycle
Active and available for purchase
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Suitable for a wide range of high-power applications
RoHS3 compliance for environmental sustainability
FDP027N08B MOSAMI Semiconductor/onsemi