Manufacturer Part Number
FDN86246
Manufacturer
onsemi
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
150V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
261mOhm Maximum On-Resistance (Rds(on)) at 1.6A, 10V
6A Continuous Drain Current (Id) at 25°C
225pF Maximum Input Capacitance (Ciss) at 75V
5W Maximum Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for improved efficiency
High voltage and current handling capability
Small surface mount package
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
4V Maximum Gate Threshold Voltage (Vgs(th)) at 250μA
6V/10V Drive Voltage Range
5nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
Universal compatibility with electronic circuits and systems requiring a high-performance N-Channel MOSFET
Application Areas
Power management circuits
Motor control
Switching applications
Industrial and consumer electronics
Product Lifecycle
The FDN86246 is an active product and not nearing discontinuation.
Replacements and upgrades are available from onsemi.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high voltage/current handling, and low input capacitance
Compact surface mount package for space-constrained designs
Proven reliability and quality from a trusted manufacturer, onsemi
Broad compatibility and suitability for a wide range of power management and switching applications
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