Manufacturer Part Number
FDN5618P
Manufacturer
onsemi
Introduction
Power MOSFET transistor with P-Channel design
Product Features and Performance
Low on-resistance of 170 mOhm @ 1.25 A, 10V
High maximum drain-to-source voltage of 60 V
Wide operating temperature range of -55°C to 150°C
Low gate charge of 13.8 nC @ 10 V
Low input capacitance of 430 pF @ 30 V
Product Advantages
Excellent power efficiency due to low on-resistance
Wide voltage and temperature operating range
Compact surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs Max): ±20 V
Continuous Drain Current (Id): 1.25 A @ 25°C
On-Resistance (Rds(on) Max): 170 mOhm @ 1.25 A, 10 V
Input Capacitance (Ciss Max): 430 pF @ 30 V
Power Dissipation (Max): 500 mW
Quality and Safety Features
RoHS3 compliant
Solid construction in a reliable SOT-23-3 package
Compatibility
Compatible with a wide range of power supply and control applications
Application Areas
Ideal for use in power management, control circuits, and other electronic applications
Product Lifecycle
Currently available, no information on discontinuation
Key Reasons to Choose
Excellent power efficiency and performance
Wide voltage and temperature operating range
Compact and reliable package
Suitable for a variety of power supply and control applications