Manufacturer Part Number
FDN359BN
Manufacturer
onsemi
Introduction
The FDN359BN is a N-Channel MOSFET transistor from onsemi's PowerTrench series, designed for a variety of power management and switching applications.
Product Features and Performance
30V Drain-to-Source Voltage (Vdss)
46mΩ maximum On-Resistance (Rds(on)) at 2.7A, 10V
650pF maximum Input Capacitance (Ciss) at 15V
500mW maximum Power Dissipation at 25°C ambient
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
High efficiency due to low on-resistance
Compact surface mount package
Suitable for high-frequency switching applications
Good thermal performance
Key Technical Parameters
N-Channel MOSFET
Vgs(th) (max): 3V @ 250μA
Drive Voltage (max Rds(on), min Rds(on)): 4.5V, 10V
Gate Charge (Qg) (max): 7nC @ 5V
Quality and Safety Features
RoHS3 compliant
Proven PowerTrench technology for high reliability
Compatibility
SOT-23-3 package
Compatible with a variety of power management and switching applications
Application Areas
Power supplies
DC-DC converters
Motor drives
Lighting control
General-purpose switching
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement/upgrade options available if needed
Key Reasons to Choose
High efficiency and low on-resistance
Compact surface mount package
Wide operating temperature range
Suitable for high-frequency switching
Reliable PowerTrench technology
RoHS3 compliance for environmental safety
FDN3599N
FDN360NAMI Semiconductor/onsemi